Semiconductor device having a GESC layer between silicon layers

Details Semiconductor device having a GESC layer between silicon layers Semiconductor device having a GESC layer between silicon layers

1997-03-21

1998-07-21

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 19, 257 55, 257 63, 257458, 257 65, 257461, 438 37, 438 87, 438933, H01L 2906

Patent

active

057838399

ABSTRACT:
Disclosed is a semiconductor device, which is used as an optical detector and has: a photodiode section which has a first silicon layer, a light-absorbing layer and a second silicon layer which are in turn layered on a silicon substrate; wherein the light-absorbing layer is formed as a single silicon-germanium epitaxial layer and the single silicon-germanium epitaxial layer has a germanium concentration distribution which provides germanium concentrations of zero at its interfaces to the first silicon layer and the second silicon layer and provides a triangle-shaped concentration profile that a peak concentration value is provided in the middle of the single silicon-germanium epitaxial layer.

REFERENCES:
patent: 4529455 (1985-07-01), Bean et al.
patent: 4772924 (1988-09-01), Bean et al.
patent: 5691546 (1997-11-01), Morishita

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