High-voltage photovoltaic cell having a heterojunction of amorph

Details High-voltage photovoltaic cell having a heterojunction of amorph High-voltage photovoltaic cell having a heterojunction of amorph

1981-05-19

1983-06-14

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 2, 357 30, H01L 3106

Patent

active

043884822

ABSTRACT:
A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, as either the p or n type side of the cell exposed to the incident light, an amorphous semiconductor which satisfies the requirements that the optical band gap, Eg.opt, be not less than about 1.85 eV, the electric conductivity be not less than about 10.sup.-8 (.OMEGA..cm).sup.-1 the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts, and be formed of a substance represented by one of the general formulas, a-Si.sub.1-x C.sub.x and a-Si.sub.1-y N.sub.y.

REFERENCES:
patent: 4109271 (1978-08-01), Pankove

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