Thin film transistor having a vertical structure and a method of

Details Thin film transistor having a vertical structure and a method of Thin film transistor having a vertical structure and a method of

1997-12-22

2000-11-07

Sikes, William L.

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 42, 257 59, 257 72, G02F 1136, H01L 2904

Patent

active

061444227

ABSTRACT:
Disclosed herein is a thin film transistor for a liquid crystal display device comprising: a substrate; a source(drain) electrode formed on the substrate, with a first width; a semiconductor layer formed on the source(drain) electrode having a second width, the second width being narrower than the first width; an insulating layer formed on the entire surface of the resultant surface structure in which the semiconductor layer is formed, having a contact hole for exposing one portion of the semiconductor layer; the drain(source) electrode formed on a portion of a surface of the insulating layer, filling the contact hole; and a gate electrode formed on the other portion of the insulating layer, separated from the second electrode with a selected distance.

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