Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1994-02-09

1998-07-21

Niebling, John

Fishing, trapping, and vermin destroying

437229, 15665911, H01L 21312, H01L 21461

Patent

active

057834598

ABSTRACT:
A metal wiring is fabricated for a semiconductor device by fabricating an metal layer made of, a aluminum alloy on a semiconductor substrate through an insulation layer and an undercoating layer for the metal layer, optically patterning a resist layer for producing a resist pattern, radiating ultraviolet rays onto the resist pattern for curing the resist pattern so that the resist pattern becomes a cured resist pattern, etching the metal layer with reactive gas including chlorine by using the cured resist pattern as a mask so as to produce a metal wiring under the cured resist pattern and ashing the cured resist pattern by down flow ashing of oxygen gas including hydrogen and/or hydrogen monoxide, producing the metal wiring to the semiconductor device, wherein the curing by radiation with ultraviolet rays reduces the amount of decomposed polymer on the pattern resist, and therefore on the metal wiring, which would otherwise have formed as a result of this down flow ashing with oxygen.

REFERENCES:
patent: 5397432 (1995-03-01), Konno et al.
S.C. Lee et al. "Effects of Deep UV Radiation on Photoresist in Al" Emerging Semicond. Tech. ASTM Special Tech. Publication No. 960 (1987) pp. 250-256.
A. Gutmann et al "Thermal Stability and Etching Resistance of Formaldehyde and Deep UV Hardened Photoresists" Microelectron. Eng. vol. 3 No. 1-4 (Dec. 1985) pp. 329-337.
Abstract of Japanese Patent Appln. No. 2-71520, dated Mar. 12, 1990.

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