Semiconductor metalization barrier

Details Semiconductor metalization barrier Semiconductor metalization barrier

1999-03-30

2000-11-07

Smith, Matthew

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257752, 257759, 257762, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

06144099&

ABSTRACT:
A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.

REFERENCES:
patent: 3768151 (1973-10-01), Marinace
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5824599 (1998-10-01), Schacham-Diamand
patent: 5880018 (1999-03-01), Boeck
patent: 5897371 (1999-04-01), Yeh et al.
patent: 6037664 (2000-03-01), Zhoa et al.

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