Light emitting semiconductor device having plural light emitting

Details Light emitting semiconductor device having plural light emitting Light emitting semiconductor device having plural light emitting

1998-11-10

2000-11-07

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 89, 257 90, H01L 3300

Patent

active

061440434

ABSTRACT:
A light emitting semiconductor device in which LEDs for emitting light different in wavelength from one another are densely integrated. First to fifth semiconductor layers are AlGaAs layers being different in Al composition ratio, and when it is assumed that the energy band gaps of the first to fifth semiconductor layers are respectively Eg1, Eg2, Eg3, Eg4 and Eg5, they satisfy the relation that Eg1<Eg2<Eg3<Eg4 and Eg1<Eg5. The pn fronts formed by p-type domains and the n-type domain of the semiconductor body are individually formed in the first semiconductor layer, the second semiconductor layer and the third semiconductor layer which form a stacked semiconductor layer. The LEDs emit light having wavelengths corresponding to the energy band gaps of the semiconductor layers in which the pn fronts are formed. These LEDs are integrated at intervals of a pitch between the p-type domains or the p-type electrodes.

REFERENCES:
patent: 4148045 (1979-04-01), Fang et al.
patent: 4199385 (1980-04-01), Hung et al.
"Hakkou-daiodo" (Light Eitting Diode), Okuno, pp. 27-30 Sangyo Tosho Inc., 1994.

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