Semiconductor substrate and method of manufacturing the same

Details Semiconductor substrate and method of manufacturing the same Semiconductor substrate and method of manufacturing the same

1998-03-25

2000-11-07

Picardat, Kevin M.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438409, 438458, 438459, H01L 2130, H01L 2146

Patent

active

061436283

ABSTRACT:
A manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer and a wafer manufactured by that method are provided. After wafer bonding, separation is made on an interface of a high porosity layer in a porous region including a low porosity layer and the high porosity layer in a surface formed on a main surface side of a first Si substrate 2 to transfer a non-porous layer onto a second substrate. After separation at the high porosity layer, a residual low porosity thin layer is made non-porous by a smoothing process such as hydrogen annealing without using selective etching.

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