Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1999-11-05
2000-11-07
Tsai, Jey
Semiconductor device manufacturing: process
Making passive device
Resistor
H01L 2702
Patent
active
061436151
ABSTRACT:
A semiconductor processing method of forming a resistor from semiconductive material includes: a) providing a node to which electrical connection to a resistor is to be made; b) providing a first electrically insulative material outwardly of the node; c) providing an exposed vertical sidewall in the first electrically insulative material outwardly of the node; d) providing a second electrically insulative material outwardly of the first material and over the first material vertical sidewall, the first and second materials being selectively etchable relative to one another; e) anisotropically etching the second material selectively relative to the first material to form a substantially vertically extending sidewall spacer over the first material vertical sidewall and to outwardly expose the first material adjacent the sidewall spacer, the spacer having an inner surface and an outer surface; f) etching the first material selectively relative to the second material to outwardly expose at least a portion of the spacer outer surface; g) providing a conformal layer of a semiconductive material over the exposed outer spacer surface and over the inner spacer surface, the conformal layer making electrical connection with the node; and h) patterning the conformal layer into a desired resistor shape. SRAM and other integrated circuitry incorporating this and other resistors is disclosed.
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I. Antipov; Sidewall Resistors Fabricated in a Dielectric Isolation Process; IBM Technical Disclosure Bulletin, vol. 19, No. 7, Dec. 1976; pp. 2525-2526.
Micro)n Technology, Inc.
Tsai Jey
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