Dissolved wafer fabrication process and associated microelectrom

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 40, 438 43, 438 48, 438 50, 438 51, 438 53, 438455, 438456, 438457, 438458, 438459, 438107, 438164, H01L 2100

Patent

active

06143583&

ABSTRACT:
The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and a support substrate. In order to space the mechanical and/or electromechanical members of the resulting MEMS device above the support substrate, mesas are formed on the support substrate. By forming the mesas on the support substrate instead of the partially sacrificial substrate, the mechanical and/or electromechanical members can be more precisely formed from the partially sacrificial substrate since the inner surface of the partially sacrificial substrate is not etched and therefore remains planar. As such, trenches can be precisely etched through the planar inner surface of the partially sacrificial substrate to define mechanical and/or electromechanical members of the MEMS device. The present invention also provides an improved MEMS device, such as an improved gyroscope, that includes more precisely and reliably defined mechanical and/or electromechanical members.

REFERENCES:
patent: 5273939 (1993-12-01), Becker et al.
patent: 5426070 (1995-06-01), Shaw et al.
patent: 5448444 (1995-09-01), Provenzano et al.
patent: 5572029 (1996-11-01), Walker et al.
patent: 5578843 (1996-11-01), Garabedian et al.
patent: 5650568 (1997-07-01), Greiff et al.
patent: 5668033 (1997-09-01), Ohara et al.
patent: 5672240 (1997-09-01), Stoner et al.
patent: 5858814 (1999-01-01), Goossen et al.
patent: 5930651 (1999-07-01), Terasawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dissolved wafer fabrication process and associated microelectrom does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dissolved wafer fabrication process and associated microelectrom, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dissolved wafer fabrication process and associated microelectrom will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1639698

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.