Apparatus for preparing and metallizing high aspect ratio silico

Details Apparatus for preparing and metallizing high aspect ratio silico Apparatus for preparing and metallizing high aspect ratio silico

1998-05-27

2000-11-07

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118719, 20429801, 134158, C23F 102

Patent

active

061431281

ABSTRACT:
A contact cleaning apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 80 percent by volume. A selectively operable 450 MHz MF energy source is coupled to the chamber to energize a plasma in gas. A selectively operable 13.56 MHz HF energy source, controllable independently of the MF energy source and connected between the substrate support and a chamber anode biases a wafer on the support to less than 100 volts, preferably 15 to 35 volts, negative. A heater heats the wafer to temperature about 550.degree. C. Preferably, a turbo molecular pump is used to pump the cleaning gas while maintaining a pressure of between 1 mTorr and 10 Torr and at a rate of from 3 to 12 sccm.

REFERENCES:
patent: 4579609 (1986-04-01), Reif et al.
patent: 4871421 (1989-10-01), Ogle et al.
patent: 5084125 (1992-01-01), Aoi
patent: 5342652 (1994-08-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5391281 (1995-02-01), Hieronymi et al.
patent: 5434110 (1995-07-01), Foster et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5556521 (1996-09-01), Ghanbari
patent: 5785796 (1998-07-01), Lee
patent: 5792261 (1998-08-01), Hama et al.
patent: 5897713 (1999-03-01), Tomioka et al.
patent: 6003243 (1998-07-01), Ohmi
Rana, V.V.S. et al., in: Tungsten and Other Refractory Metals for VLSI Applications, vol. II, pp. 187-195, E.K. Broadbent ed., Materials Research Society 1987.
Prasad, Jagdish et al., Atomic Hydrogen Cleaning of a TiN Surface, Applied Surface Science 74 (1994), pp. 115-120, 1994 Elsevier Science B.V.
Webster's ninth New Collegiate Dictionary, no date.
Pierson, Handbook of Chemical Vapor Deposition, Noyes Publications, Park Ridge, NJ, p. 225, no month.
Taguwa et al., International Electron Devices Meeting, Washington, D.C., Dec. 10-13, 1995 pp. 695-698.
Taguwa et al., IEEE Transactions on Electron Devices, vol. 44, No. 4, pp. 588-593.

Affiliated with

Also associated with

Rating

Apparatus for preparing and metallizing high aspect ratio silico does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for preparing and metallizing high aspect ratio silico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for preparing and metallizing high aspect ratio silico will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1637055