Patent
1977-06-21
1978-08-29
Edlow, Martin H.
357 13, 357 16, H01L 2714
Patent
active
041107780
ABSTRACT:
A narrow-band, inverted homo-heterojunction avalanche photodiode, configured in the shape of a mesa situated upon a substrate which is transparent to selected light energy wavelengths. The diode is inverted for operation such that the incoming light energy enters the substrate side, passes through a wavelength selective buffer layer and is absorbed upon entering the succeeding, active region. Avalanche gain is attained by drift from the area of absorption to the high field p-n homo-heterojunction located immediately thereafter. The device exhibits low levels of noise during operation because absorption is occurring in a low field region and because the ionization and breakdown noise associated with lattice mismatches is avoided through the formation of the p-n homo-heterojunction in one continuous growth process. Appropriate passivation of the mesa walls inhibits surface leakage and breakdown effects.
REFERENCES:
patent: 3436613 (1969-04-01), Gerhard
patent: 3534231 (1970-10-01), Beard
patent: 3814993 (1974-06-01), Kennedy
patent: 3821777 (1974-06-01), James
patent: 3886579 (1975-05-01), Ohuchi
patent: 3959646 (1976-05-01), DE Cremoux
patent: 4021836 (1977-05-01), Andrews
patent: 4053919 (1977-10-01), Andrews
Eden Richard C.
Nakano Kenichi
Edlow Martin H.
Rusz Joseph E.
Shannon James S.
The United States of America as represented by the Secretary of
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