Patent
1975-08-25
1977-11-29
Wojciechowicz, Edward J.
357 23, 357 41, 357 52, H01L 2978, H01L 2702, H01L 2934
Patent
active
040608271
ABSTRACT:
A transistor wherein a termination of a PN junction is covered with a silicon oxide film and all the exposed surfaces of said film are covered with a silicon nitride film.
REFERENCES:
patent: 3455020 (1969-07-01), Dawson
patent: 3497407 (1970-02-01), Esch et al.
patent: 3523038 (1970-08-01), Sanders
patent: 3597667 (1971-08-01), Horn
Momoi Toshimitu
Ono Minoru
Hitachi , Ltd.
Wojciechowicz Edward J.
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