Light activated thyristor capable of activation by intensity rad

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357 20, 357 30, 357 68, 357 86, H01L 2974

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active

040608263

ABSTRACT:
The present invention pertains to a light activated thyristor which increases the current density of light-generated carriers by means of a low resistance path from an area of carrier generation in a base zone of a first conductivity type into a portion of an adjacent emitter zone of a second conductivity type. In one embodiment the low resistance path takes the form of an annular gate electrode affixed to the base zone and having a projection bordering the base-emitter PN junction. In another embodiment the low resistance path takes the form of a ballast segment disposed in the base zone, the ballast segment having an opening for funnelling the carriers to the base-emitter PN junction.

REFERENCES:
patent: 3697833 (1972-10-01), Nakata
patent: 3731162 (1973-05-01), Suenaga
patent: 4012761 (1977-03-01), Ferro et al.

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