Slow speed semiconductor switching device

Details Slow speed semiconductor switching device Slow speed semiconductor switching device

1975-06-16

1977-11-29

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252A, 357 38, 357 57, H01L 2900

Patent

active

040608247

ABSTRACT:
The specification discloses a slow speed semiconductor switching device including a body of semiconductor material having at least six layers of alternating opposite types of conductivity to form a plurality of P-N junctions. Anode and cathode electrodes are attached to exterior ones of the layers having opposite conductivity types. A gate electrode is connected to one of the layers for receiving a gating signal. The gating signal is of a predetermined level to cause more than one regenerative switching action within the body. In operation of the device, the total switching action of the body is sufficiently slow to substantially inhibit the generation of rf current by the body.

REFERENCES:
patent: 2838617 (1958-06-01), Tummers et al.
patent: 2980810 (1961-04-01), Goldey
patent: 3165710 (1965-01-01), Strull
patent: 3251004 (1966-05-01), Shombert et al.
patent: 3274463 (1966-09-01), Hutson
patent: 3391310 (1968-07-01), Gentry
patent: 3864719 (1975-02-01), Uematsu et al.
I. Grekhov et al., "Thyristors with more than one Collector," Physics of P-N Jcns. and Semiconductor Devices, 2nd Ed., London, England, 1971, pp. 224-227.
A. Lebedev, "Analysis of Processes in Multilayer Semiconductor Structures of the N-P-N-P-N-P Type," Physics of P-N Jcns. and Semiconductor Devices, 2nd Ed., London, England, 1971, pp. 321-329.

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