Fishing – trapping – and vermin destroying
Patent
1986-05-27
1988-02-02
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 62, 437203, 437238, 437978, H01L 21443, H01L 21473
Patent
active
047229101
ABSTRACT:
In a semiconductor device fabrication process, the SILO (Sealed Interface Local Oxidation) field oxide formation process is used to provide essentially vertical sidewalls between the field oxide surface and active regions. After field oxide formation and doping of active regions, the device is conformally coated with an oxide layer, which is patterned by a conventional photomasking process to define contact holes. Contact holes are then anisotropically etched through the oxide layer to the active regions. Conformal coating of the vertical sidewalls insures that an oxide sidewall spacer remains where the contact holes intersect the field oxide. Finally, a metal contact layer is deposited in the contact holes. The sidewall spacer automatically spaces the metal contact from the edges of the active region, thereby preventing leakage to the substrate.
REFERENCES:
patent: 4404733 (1983-09-01), Sasaki
patent: 4551910 (1985-11-01), Patterson
patent: 4577391 (1986-03-01), Hsia et al.
J. Hui et al, "Electrical Properties of MOS Devices made with SILO Technology," IEDM, May 1982, pp. 220-223.
Y. Matsumoto et al, IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 429-433.
Analog Devices Inc.
Chaudhuri Olik
LandOfFree
Partially self-aligned metal contact process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Partially self-aligned metal contact process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Partially self-aligned metal contact process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1635726