Method of making an integrated optical detector

Details Method of making an integrated optical detector Method of making an integrated optical detector

1974-09-16

1976-03-23

Hall, Carl E.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 250211J, 250492A, 350 96WG, 357 30, H01L 2102

Patent

active

039451100

ABSTRACT:
There is disclosed an integrated optical detector comprising a semiconductor substrate having an optical waveguide formed integrally therewith and a photodetector made from the same semiconductor material as the waveguide and integrally coupled to it. The detector region is sensitive to light of the same wavelengths that can be transmitted through the waveguide region of the semiconductor without excessive absorption therein by virtue of the fact that after the waveguide is formed proton bombardment of the detector portion thereof is used to create optically active defect centers thereby shifting the effective absorption edge in the detector region. Where gallium arsenide is used as the semiconductor defect levels induced by implantation of high energy protons give rise to optical absorption between 6 micron and 0.9 micron. This results in detector action in the presence of a Schottkey barrier depletion layer. Detector response times less than 200 nanoseconds and external quantum efficiencies of 16 percent have been observed in the device.

REFERENCES:
patent: 3448349 (1969-06-01), Sumner
patent: 3542536 (1970-11-01), Flam et al.
patent: 3752702 (1973-08-01), Tizuka et al.
patent: 3865625 (1975-02-01), Cho et al.

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