Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1992-08-31

1994-01-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257771, 257765, 257750, H01L23248, H01L 2946, H01L 2952, H01L 2964

Patent

active

052784495

ABSTRACT:
In this semiconductor device, contact holes extending from a lower interconnection layer containing diffusion layers at the surface of a Si substrate to an Al-involved interconnection layer formed above the Sis substrate through the intermediation of an interlayer dielectric film are filled with Al alloy having a eutectic point lower than that of Al-Si alloy. Then, for example, an Al-Ge alloy is sputtered, reflowed and allowed to react with the Si film to convert into an Al-Ge-Si alloy. At the stage of forming the Al-Ge-Si alloy, the reflow ceases. This brings the reduction of junction leakage current from the diffusion layers. Similarly in the case of a high aspect ratio of contact hole, this technique enables the contact hole to be fully filled with the above-mentioned Al alloy. Besides this technique enables direct interconnections in multilayer Al-involved interconnection structure of between an upper-layer Al-involved interconnection and diffusion layers, contributing to reduction of area required for interconnections.

REFERENCES:
patent: 3382568 (1968-05-01), Kuiper
patent: 3501829 (1970-03-01), Corwin
patent: 3740835 (1973-06-01), Duncan
patent: 3902936 (1975-09-01), Price
patent: 4538344 (1985-09-01), Okumura et al.
Planarized Aluminum Metallization for Sub-0.5 .mu.m CMOS Technology, 1990 IEEE, IEDM 90, pp. 51-54, by F. S. Chen, et al.

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