Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1992-03-18

1994-01-11

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257763, 257764, 257765, 257774, 437180, 437192, 437194, 437200, H01L 2348, H01L 2144

Patent

active

052784487

ABSTRACT:
A semiconductor device has a multilayered metalization including a CVD tungsten film, a thin buffer layer deposited on the CVD tungsten film by sputtering, and an Al-alloy layer formed on the buffer layer. Due to the existence of the thin buffer layer, the crystal grains of the Al-alloy layer do not become small and the electromigration resistance as wiring is enhanced.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4985371 (1991-01-01), Rana et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 5049975 (1991-09-01), Ajika et al.
N. S. Tsai et al., "IEEE, IEDM88, Tech. Digest", 1988, pp. 462-465 Layer Tungsten and Its Applications For VLSI Interconnects.
H. H. Hoang et al., "Processing, IEEE, 1990", pp. 133-141, Jun. 12/13, 1990 Barrier Metal Effects on Electro. Of Layer Aluminum Metallization.

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