Method for manufacturing a semiconductor device having wiring el

Details Method for manufacturing a semiconductor device having wiring el Method for manufacturing a semiconductor device having wiring el

1992-11-16

1994-01-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 437194, 437200, 437203, H01L 2144

Patent

active

052780996

ABSTRACT:
A semiconductor device of the invention has a p.sup.+ -type silicon source region, an insulating film formed on the source region and having a contact hole, and a wiring electrode connected to the source region through the contact hole. The wiring electrode has a Ti layer formed on the insulating film and an exposed surface of the source region, a TiN layer formed on the Ti layer, and an Al layer formed on the TiN layer.

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patent: 4622919 (1986-11-01), Suzuki et al.
Ting, "TIN formed by evaporation as a diffusion barrier between Al and Si", J. Vac. Sci. Technol., 21(1) May/Jun. 1982, pp. 14-18.
Rosser et al., "Self aligned Nitridation of TiSi.sub.2 : A TiN/TiSi.sub.2 contact structure", Mat. Res. Soc. Symp. Proc., vol. 37, 1985, pp. 607-612.
Wittmer, "High-Temperature Contact Structures for Silicon Semi-conductor Devices," Appl. Phys. Lett. 37(6), pp. 540-542, Sep. 15, 1980.
Abstract in English of Japanese Patent Publication No. 58-101454.
C. Y. Ting, "New Structure for Contact Metallurgy," IBM Technical Disclosure Bulletin, vol. 7, No. 12, May 1983, pp. 6398-6399.
H. M. Dalal and J. E. Taylor, "Multilevel Interconnection Metallurgy System for Semiconductor Devices", IBM Technical Disclosure Bulletin, vol. 15, No. 10, Mar. 1973, pp. 3027-3028.
I. Suni, M. Blomberg, and J. Saarilahti, "Performance of Titanium Nitride Diffusion Barriers in Aluminum-Titanium Metallization Schemes for Integrated Circuits," J. Vac. Sci. Technol. A, vol. 3, No. 6, Nov./Dec. 1985, pp. 2233-2236.

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