Method of forming crystal semiconductor film

Details Method of forming crystal semiconductor film Method of forming crystal semiconductor film

1991-12-27

1994-01-11

Wilczewski, Mary

Fishing, trapping, and vermin destroying

156610, 156612, 437 83, H01L 21205

Patent

active

052780929

ABSTRACT:
A method of forming a crystal semiconductor by depositing on a substrate with a depression a first layer with a higher nucleation density and a smaller mechanical abrasion rate than a second layer deposited on the first layer and forming a nucleation surface by removing a minute portion of the second layer in the area of the depression, thereby uncovering the first layer. The uncovered portion of the first layer is sufficiently minute so as to form only a single nucleus from which a monocrystal is grown by a crystal formation process from the single nucleus. The monocrystal is allowed to grow beyond the area of the depression. An abrasive grain mechanically polishes the grown monocrystal to a level corresponding to the surface of the first layer, thereby flattening the monocrystal.

REFERENCES:
patent: 3979237 (1976-09-01), Morcom et al.
patent: 4494303 (1985-01-01), Celler et al.
patent: 4800527 (1989-01-01), Ozaki et al.
patent: 4999313 (1991-03-01), Arikawa et al.

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