Method of producing a photoelectric conversion layer

Details Method of producing a photoelectric conversion layer Method of producing a photoelectric conversion layer

1982-06-15

1984-07-03

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

313384, 313385, 427 86, 4273722, B05D 314, B05D 512

Patent

active

044579497

ABSTRACT:
A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.

REFERENCES:
patent: 4255686 (1981-03-01), Maruyama et al.
Yamamoto et al., "Proceedings of the 12th Conf. on Solid State Devices, Tokyo 1980" Japanese Journal of Applied Physics, vol. 20, (1981) Supplement 20-1, pp. 305-310.
Chittick et al., "J. Electrochem. Soc. Solid State Science", vol. 116, No. 1, Jan. 1969.

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