Metal fusion bonding – Process – Critical work component – temperature – or pressure
Patent
1985-02-15
1988-02-02
Buczinski, Stephen C.
Metal fusion bonding
Process
Critical work component, temperature, or pressure
357 65, 228 11, H01L 2348
Patent
active
H00004340
ABSTRACT:
A contact structure and method of bonding III-V semiconductors which prevents shorting of the edges of the semiconductor chip and also allows the chip to be bonded with either major surface facing upward. Both surfaces include a gold pad surrounded by a material which is immiscible with the preform metal used to bond the chip to an outside surface. During fluxless bonding between the gold pad on one surface of the chip and the preform, the preform metal is prevented from wetting the edges of the chip. The opposite surface of the chip can be electrically contacted by wire bonding to the gold pad on that surface.
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American Telephone and Telegraph Company AT&T Bell Laboratories
Birnbaum Lester H.
Buczinski Stephen C.
Wallace Linda J.
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