Semiconductor NAND type flash memory with incremental step pulse

Details Semiconductor NAND type flash memory with incremental step pulse Semiconductor NAND type flash memory with incremental step pulse

1997-09-09

1998-09-22

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 36518517, 36518519, G11C 1606

Patent

active

058124578

ABSTRACT:
A semiconductor nonvolatile memory device enabling high speed, high precision data programming and have a large disturb margin, that is, a NAND type flash memory wherein the programming operation is performed by repeating a programming operation a plurality of times through a verify read operation, where the programming word line voltages VPP1 to VPPk and an intermediate prohibit voltage VM1 to Vmk are set to values which are incremented along with an increase of the number k of programming and where the voltage increments of the intermediate prohibit voltage for each increase of the number of programming is set to half of the voltage increments of the programming word line voltage for each increase of the number of programming. Due to this, high speed, high precision data programming becomes possible and further the degradation of the disturb margin can be eliminated.

REFERENCES:
patent: 5379256 (1995-01-01), Tanaka et al.
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5487033 (1996-01-01), Keeney et al.

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