Method for achieving a high quality thin oxide using a sacrifici

Details Method for achieving a high quality thin oxide using a sacrifici Method for achieving a high quality thin oxide using a sacrifici

1992-10-09

1994-05-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437239, 437 10, 437 52, 437983, H01L 2102

Patent

active

053169816

ABSTRACT:
The quality of both a gate oxide and a tunnel oxide in a P-well of a CMOS EEPROM process is improved by growing and subsequently annealing in-situ a gate oxide. A photoresist layer is then applied and defined to expose regions of the gate oxide which are then etched to expose the surface of the semiconductor, and after which the photoresist layer is removed. Subsequently, the remaining gate oxide is partially etched to reduce the thickness of the gate oxide and to remove any native oxide which may have formed over the exposed semiconductor surface. Finally, a tunnel oxide is grown upon the exposed semiconductor surface. The quality of this tunnel oxide is dramatically improved due to the in-situ anneal of the gate oxide, even though the gate oxide (in the region of the tunnel oxide) is totally removed before tunnel oxide growth. Furthermore, the re-oxidized gate oxide which was not entirely removed before tunnel oxide growth also exhibits higher breakdown voltages.

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