Process for forming deposited film by use of alkyl aluminum hydr

Details Process for forming deposited film by use of alkyl aluminum hydr Process for forming deposited film by use of alkyl aluminum hydr

1992-06-17

1994-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437194, 437195, 437245, H01L 21285

Patent

active

053169727

ABSTRACT:
In forming a deposited film composed mainly of Al according to the CVD method utilizing gas of alkyl aluminum hydride, hydrogen gas, and if desired, further gas containing Si atoms, film formation is carried out by shifting the deposition rate from a low deposition rate to a high deposition rate.
According to this method, excellent selectivity is exhibited and also a film excellent in flatness can be deposited at a high deposition rate.

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