Method of making semiconductor surface emitting laser

Details Method of making semiconductor surface emitting laser Method of making semiconductor surface emitting laser

1993-02-11

1994-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

372 43, 372 45, 372 50, 372 92, 437107, 437126, 437129, 437133, H01L 2120

Patent

active

053169689

ABSTRACT:
The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over the active area by in situ metalization in high vacuum. The active area can be isolated, as by ion implantation, providing an electrical path through the active region free of the outer reflector stack. The result is a surface emitting laser having reduced series resistance. The device lases at lower voltage and provides an enhanced intensity of optical output as compared with conventional planar devices.

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