Method for manufacturing semiconductor light-receiving elements

Details Method for manufacturing semiconductor light-receiving elements Method for manufacturing semiconductor light-receiving elements

1993-02-01

1994-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 3, 437126, 437133, 437976, 257190, H01L 3118

Patent

active

053169565

ABSTRACT:
A method for manufacturing semiconductor light-receiving elements is provided. The method includes the steps of forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate, forming a p-type layer in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer, and separating the n-InP substrate on which the p-type layer has been formed into semiconductor light-receiving elements.

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Journal of Crystal Growth, vol. 96, No. 1, May 1989, Amsterdam, NL, pp. 47-51.

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