Semiconductor light emitting device

Coherent light generators – Particular active media – Semiconductor

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357 17, 372 46, H01S 319

Patent

active

044160119

ABSTRACT:
A light emitting device comprising a first confinement layer, an active layer having a vee-shaped groove therein extending from a surface thereof towards the first confinement layer and a second confinement layer filling the groove and overlying the surface of the active layer. Electrical current flowing in the device flows through the grooved portion of the active region thereby providing confinement of the current and the light beam emitted by the device in the plane of the active layer.

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InGaAsP Quaternary Alloys: Composition, Refractive Index and Lattice Mismatch, G. H. Olsen et al., Journal of Electronic Materials, vol. 9, No. 6, 1980, pp. 977-987.

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