Patent
1980-07-16
1983-01-25
Clawson, Jr., Joseph E.
357 51, 357 56, 357 59, H01L 2978
Patent
active
043706690
ABSTRACT:
A self-aligned polysilicon gate depletion-type n-channel IGFET serving as a load transistor in a mesa-type integrated circuit having a P+ field region surface. The gate is ring-shaped and surrounds the IGFET source region. The source region does not intersect a mesa edge. The gate overlaps mesa edges to reduce peripheral capacitance.
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Clawson Jr. Joseph E.
General Motors Corporation
Wallace Robert J.
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