Method for making a silicon field emission device

Details Method for making a silicon field emission device Method for making a silicon field emission device

1993-03-02

1994-05-31

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, H01J 902

Patent

active

053165110

ABSTRACT:
This invention discloses a method for making a silicon field emission device which ensures in the higher electron emission effect at the same voltage required for field emission by shrinking the diameter of a gate aperture to make the field emission structure sharp. The shrinkage effect of the gate aperture of about 42-45% may be achieved in accordance with this invention.

REFERENCES:
patent: 4210689 (1980-07-01), Komatsu
patent: 4663559 (1987-05-01), Christensen
patent: 5130266 (1992-07-01), Huang et al.
"Oxidation-Sharpened Gated Field Emitter Array Process"; 1991 IEEE, pp. 2389-2391; McGruer, Warner, Singhal, Gu, Chan.

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