Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-08-22
1998-09-22
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 66, 257 72, 349 41, 349 42, 349 43, H01L 2701
Patent
active
058118357
ABSTRACT:
An array substrate of a liquid crystal display device has a glass substrate on which gate lines, signal lines, pixel electrodes, and thin-film transistors are arranged. Each of the thin-film transistors includes a gate electrode composed of a part of one of the gate lines and including a first conductive layer formed on the glass substrate and a second conductive layer covering the first conductive layer. A gate insulating film is formed on the glass substrate and covers the gate electrode. A thin non-single-crystal silicon film is disposed on the gate insulating film on the gate electrode and includes a channel region. Source and drain electrodes are connected electrically to the thin non-single-crystal silicon film. The first conductive layer has two opposite side edge portions extending inclined at an angle to the surface of the substrate, the inclination angle of each side edge portion is ranges from 10.degree. to 30.degree., so that the thin non-single-crystal silicon film has a continuous interface without bends, situated on the side of the gate insulating film in the channel region.
REFERENCES:
patent: 5243202 (1993-09-01), Mori et al.
patent: 5334860 (1994-08-01), Naito
Kubo Akira
Seiki Masahiro
Abraham Fetsum
Kabushiki Kaisha Toshiba
Thomas Tom
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