Method for making an insulated gate field effect transistor util

Details Method for making an insulated gate field effect transistor util Method for making an insulated gate field effect transistor util

1977-05-02

1978-08-29

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29590, B01J 1700

Patent

active

041093720

ABSTRACT:
The invention disclosed pertains to a method for the manufacture of an integrated insulated gate field effect transistor semiconductor device wherein a silicon gate structure is simultaneously formed with a composite layer of silicon and a conductive silicide forming metal which upon subsequent annealing forms a conductive metallic silicide compound within the via interconnection means. The aforesaid structure is accomplished utilizing a photoresist lift-off technique as a masking material as well as a substance per se or in combination with other materials to define evaporative conductive metal dimensions on a diffused silicon substrate.

REFERENCES:
patent: 3571913 (1971-03-01), Bodway
patent: 3740835 (1973-06-01), Duncan
patent: 3935635 (1976-02-01), Botzenhardt
patent: 3967364 (1976-07-01), Kawamoto

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