Power transistor device and method for making the same

Details Power transistor device and method for making the same Power transistor device and method for making the same

1990-10-11

1991-04-23

Wojciechowicz, Edward J.

357 51, 357 55, 357 68, H01L 2972

Patent

active

050103830

ABSTRACT:
A power transistor device includes a substrate arrangement defined by a collector region, a base region provided within the collector region, an elongated resistor region provided within the base region and located at about center thereof, and first and second emitter regions provided within the base region located equidistantly and on opposite sides of the resistor region. A first electrode segment is provided having one end thereof connected to the first emitter region and other end thereof connected to one end portion of the resistor region, a second electrode segment having one end thereof connected to the second emitter region and other end thereof connected to other end portion of the resistor region, and a median electrode segment provided at middle of the resistor region for providing the same amount of predetermined resistances between the first electrode and the median electrode and between the second electrode and the median electrode, the median electrode being used for an output of the first and second emitter regions through the predetermined resistances, respectively.

REFERENCES:
patent: 4223335 (1980-09-01), Kane
patent: 4656491 (1987-04-01), Igarashi

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