Heterojunction bipolar transistor having double hetero structure

Details Heterojunction bipolar transistor having double hetero structure Heterojunction bipolar transistor having double hetero structure

1989-12-04

1991-04-23

Hille, Rolf

357 4, 357 16, H01L 2972, H01L 2712, H01L 29161

Patent

active

050103822

ABSTRACT:
A double heterojunction bipolar transistor which comprises a first conductivity type emitter layer, a second conductivity type base layer which is in contact with the emitter layer and forms a first heterojunction in conjunction with the emitter layer, and a collector layer which is in contact with the base layer and is made up of a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The collector layer includes a low-impurity concentration layer which is in contact with the base layer. The low-impurity concentration layer has the same conductivity type as the base layer and has an impurity concentration lower than that of the base layer. The collector layer forms a second heterojunction in conjunction with the base layer. The emitter layer and the collector layer are formed of a semiconductor material having a band gap wider than that of the base layer.

REFERENCES:
"Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, vol. 70 No. 1, Jan. 1982, pp. 13-25, Herbert Kroemer.
"A Self-Consistent Particle Simulation for (AlGa) As/Ga HBTS with Improved Base-Collector Structures", Reprinted from Proceedings of the IEDM-International Electron Devices Meeting, Washington, D.C. Dec. 6-9, 1987 Riichi Katoh et al., pp. 248-251.
"A Proposed Structure for Collector Transit-Time Reduction in AlGaAs/GaAs Bipolar Transistors", IEEE Electron Device Letters, vol. ED1-7, No. 8, Aug. 1986, C. M. Maziar et al., pp. 483-485.

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