Coherent light generators – Particular component circuitry – Optical pumping
Patent
1989-05-17
1991-04-23
Hille, Rolf
Coherent light generators
Particular component circuitry
Optical pumping
357 17, 372 43, 372 45, H01L 29161
Patent
active
050103750
ABSTRACT:
A semiconductor laser device include a Si substrate, a current confinement layer having an aperture disposed on the substrate, compound semiconductor layers disposed on the current confinement layer and on the Si substrate at the aperture of the current confinement layer, and a buffer layer for relieving the stress caused by the difference in lattice constants disposed between the Si substrate and the compound semiconductor layers. The Si substrate is of a first conductivity type and the current confinement layer is of a second conductivity type, or the current confinement layer comprises a compound semiconductor while the substrate comprises Si. The aperture of the current confinement layer is produced by anodic oxidation and selective etching of the current confinement layer. Therefore, a good re-growth interface at the substrate is obtained. There are no problems from residual oxides at the surface of the substrate, of Si or p type impurities diffusing out of the surface of the substrate, or of non-uniform thermal etching during the subsequent crystal growth processes.
REFERENCES:
patent: 4667332 (1987-05-01), Mihashi et al.
patent: 4829023 (1989-05-01), Nagai et al.
patent: 4839307 (1989-06-01), Imanaka et al.
patent: 4845724 (1989-07-01), Hayakawa et al.
Sakai et al., "AlGaAs/GaAs DH Lasers . . . by MOCVD", Japanese Journal of Applied Physics, vol. 24, No. 8, Aug. 1985, pp. L666-L668.
Mihashi et al, "A Novel Self-Aligned . . . MO-CVD", Extended Abstracts of the 17th Conference on Solid State Devices and Materials, Tokyo, 1985, pp. 63-66.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Tran Minhloan
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