Semiconductor device with insulating resin layer and substrate h

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

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Details

257778, 257790, 257789, 257795, H01L 2329

Patent

active

056568576

ABSTRACT:
A semiconductor device which realize reduction of thickness with maintaining shielding effect has a shielding package having a substrate with a plurality of electrode pattern provided on a surface thereof and side walls upwardly formed in the peripheral end part of the surface thereof, a semiconductor chip having a plurality of electrodes directly connected to the electrode patterns of the shielding package, respectively, an insulating resin layer of a low dielectric constant formed on the substrate enclosed by the side walls so as to cover, and a conductive resin layer formed on an entire surface of the insulating resin layer.

REFERENCES:
patent: 5243223 (1993-09-01), Yamada et al.
patent: 5379186 (1995-01-01), Gold et al.

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