Method for separating a device-forming layer from a base body

Details Method for separating a device-forming layer from a base body Method for separating a device-forming layer from a base body

1996-02-01

1998-09-22

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438458, H01L 2130

Patent

active

058113487

ABSTRACT:
A porous Si layer is formed on a single-crystal Si substrate, and then a p.sup.+ -type Si layer, p-type Si layer and n.sup.+ -type Si layer which all make up a solar cell layer. After a protective film is made on the n.sup.+ -type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.

REFERENCES:
patent: 4727047 (1988-02-01), Bozler et al.
patent: 5250460 (1993-10-01), Yamagata et al.
patent: 5362638 (1994-11-01), Takenada et al.
patent: 5459081 (1995-10-01), Kajita

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