Process for producing compound semiconductor using an amorphous

Details Process for producing compound semiconductor using an amorphous Process for producing compound semiconductor using an amorphous

1990-04-30

1991-04-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG152, 156613, 437 90, 437110, 437126, 437915, H01L 2120

Patent

active

050100335

ABSTRACT:
A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:

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