Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-06-01
1997-08-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257432, 257438, 257603, H01L 27148, H01L 29768
Patent
active
056568355
ABSTRACT:
A very high sensitive solid state imager is realized by employing a multiplication process which includes avalanche multiplication of charges as generated by an incident light at each of several optical to electrical converting components (hereafter referred to as a photosite). Thus, the functions of a high speed electron shutter are obtained. Notwithstanding a high sensitivity, a reduced supply voltage for avalanche multiplication can be realized by laminating a transparent electrode of poly-silicon or ITO on a photosite, applying an avalanche multiplication voltage thereupon through its capacity coupling, and simultaneously applying a negative voltage on a read-out gate during a readout time. Furthermore, a reduced readout voltage can also be realized by laminating a transparent electrode of poly-silicon or ITO, on a photosite, and applying a voltage of polarity opposite to that applied during an avalanche multiplication time.
REFERENCES:
patent: 4758734 (1988-07-01), Uchida et al.
patent: 4783691 (1988-11-01), Harada
patent: 4912536 (1990-03-01), Lou
patent: 4972242 (1990-11-01), McIntyre
patent: 5118924 (1992-06-01), Mehra et al.
patent: 5162885 (1992-11-01), Hunt et al.
patent: 5214272 (1993-05-01), Ueno
patent: 5262661 (1993-11-01), Kuroda et al.
patent: 5298771 (1994-03-01), Mantell
Donnelly et al., "Planar Guarded Avalanche Diodes in InP Fabricated by Ion Implantation", Appl. Phys. Lett., vol. 35, No. 1. Jul. 1, 1979, pp. 74-76.
Matsushita Electric - Industrial Co., Ltd.
Ngo Ngan V.
LandOfFree
Solid state imager and its driving method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid state imager and its driving method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state imager and its driving method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-162116