Ion generation device, ion irradiation device, and method of man

Details Ion generation device, ion irradiation device, and method of man Ion generation device, ion irradiation device, and method of man

1995-11-17

1997-08-12

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, H01J 2702

Patent

active

056568207

ABSTRACT:
An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

REFERENCES:
patent: 5252892 (1993-10-01), Koshiishi et al.
patent: 5306921 (1994-04-01), Tanaka et al.

Affiliated with

Also associated with

Rating

Ion generation device, ion irradiation device, and method of man does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion generation device, ion irradiation device, and method of man, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion generation device, ion irradiation device, and method of man will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-162033