1988-06-07
1990-02-20
Hille, Rolf
357 68, H01L 2354
Patent
active
049031171
ABSTRACT:
A silicon oxide film and a BPSG film are formed on a silicon substrate to serve as insulating films, and a contact hole is selectively formed in the insulating films. An impurity diffusion layer is formed on the surface layer of the semiconductor substrate at the bottom portion of the contact hole. A second metal film serving as a metal electrode is formed to cover the BPSG film and the impurity diffusion layer, and a first metal film serving as a barrier layer is formed between the second metal film and the BPSG film and impurity diffusion layer. The first metal film prevents boron contained in the BPSG film from being diffused in the second metal film, thereby to prevent precipitation of silicon in the contact hole.
REFERENCES:
patent: 4271424 (1981-06-01), Inayoshi et al.
patent: 4321612 (1982-03-01), Murata et al.
"The Use of Titanium--Based Contact Barrier Layers in Silicon Technology", C. Y. Ting et al., Thin Solid Films, 96 (1982), Electronics and Optics, pp. 327-345.
Ogoh Ikuo
Okamoto Tatsuo
Clark S. V.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
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