Semiconductor photodetector

Details Semiconductor photodetector Semiconductor photodetector

1984-02-28

1986-11-18

Davie, James W.

357 22, 357 231, 357 234, 357 41, 357 45, H01L 2714, H01L 2980, H01L 3100

Patent

active

046239090

ABSTRACT:
An improved semiconductor photodetector of a type implemented with static induction transistors, and a method for driving such a device, in which data can be read out in a nondestructive mode. The static induction transistors of which the semiconductor photodetector is composed each include a gate region which forms boundaries with a channel region and in which carriers generated in response to incident light are accumulated. A structure for suppressing the depletion of carriers accumulated in the gate regions during reading of data is provided for each of the gate regions. This structure may take the form of an insulating layer which forms a potential barrier along the boundary between the gate regions and the channel region.

REFERENCES:
patent: 4364072 (1982-12-01), Nishizawa
patent: 4427990 (1984-01-01), Nishizawa
patent: 4470059 (1984-09-01), Nishizawa et al.
patent: 4521795 (1985-06-01), Coe et al.

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