1984-10-18
1986-11-18
Davie, James W.
357 16, H01L 3300
Patent
active
046239073
ABSTRACT:
A semiconductor light-emitting device according to the present invention is made by forming an undoped In.sub.1-X Ga.sub.X As.sub.1-Y P.sub.Y active layer on a n-InP clad layer, a p-In.sub.1-X Ga.sub.X As.sub.1-Y P.sub.Y active layer on said undoped active layer, and a p-n junction position in the interface between said n-InP layer and said undoped In.sub.1-X Ga.sub.X As.sub.1-Y P.sub.Y active layer or in the neighborhood thereof. By this structure, the heretofore inevitable problem of remote junction can be solved and the half value width of the light-emitting spectrum can be reduced. Therefore, the semiconductor light-emitting device according to the present invention provides higher response frequency and larger light-emitting output than the conventional semiconductor light-emitting device.
REFERENCES:
patent: 4132960 (1979-01-01), Streifer et al.
Arai et al., "1.67 .mu.m Ga.sub.0.47 -In.sub.0.53 As/InP DH Laser Double Cladded with InP by LPE Technique", JPN. J. Appl. Physics, vol. 18 (1979), No. 3, p. 709-710.
Arai et al., Room Temperature CW Operation of 1.5-1.6 .mu.m Wavelength Range GaInAsP/InP Lasers, Conference; Integrated and Guided Wave Optics Technical Digest, Jan. 28-30, 1980.
Wright et al., InGaAsP-InP Double-Heterojunction High Radiance LED's, IEEE Transaction on Electron Devices, vol. ED-26, Nov. 8, Aug. 1979.
H. Grothe et al., "Influence of Mg Doping on Cutoff Frequency and Light Output of InGaAsP/InP Heterojunction LED's" IEEE Transactions on Electron Devices, vol. ED-28, No. 4, 1981, pp. 371-373.
A. Suzuki et al., "500 Mbit/s Transmission Experiment Using 1.3 .mu.m Wavelength InGaAsP/InP High-Speed Surface-Emitting DH LEDs", Electronics Letters, vol. 19, No. 23 (1983) pp. 963-965.
A. Suzuki et al., "Pulse Response and Photo Output Characteristic of 1.3 .mu.m Band High Speed LED", p. 135.
Davie James W.
Epps Georgia Y.
Sumitomo Electric Industries Ltd.
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