Memory cell structure having radiation hardness

Details Memory cell structure having radiation hardness Memory cell structure having radiation hardness

1988-07-12

1990-02-20

Hille, Rolf

357 54, 357 59, 357 55, 357 51, 357 231, H01L 2978

Patent

active

049030949

ABSTRACT:
A memory cell structure has a thin insulating oxide barrier layer between an insulating body, such as sapphire, and a conducting layer, such as polysilicon, to prevent photoconduction between the body and the layer. Upper and lower conducting layers form a capacitor with a source and a drain in the lower layer and a gate in the upper layer to isolate the sensitive gate from a substrate during photoconduction. These features help the cell resist a radiation-induced logic state change.

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