Semiconductor device

Details Semiconductor device Semiconductor device

1988-02-22

1990-02-20

James, Andrew J.

357 16, 357 33, H01L 2980

Patent

active

049030906

ABSTRACT:
A permeable base transistor includes a conductive type emitter layer; a conductive type base layer provided on the emitter layer, the emitter layer having a wider energy bandgap than the base layer; a conductive type collector layer; comb-shaped or lattice-shaped base electrodes formed adjacent to a heterojunction surface formed by the emitter layer and the base layer, the electrodes are provided through a Schottky junction or an insulating layer to the surrounding emitter, base, and collector layers.

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Webster's Ninth New Collegiate Dictionary, Merriam-Webster Inc., 1984, p. 401.
Luryi, S., "An Induced Base Hot-Electron Transistor", IEEE Elec. Dev. Lett., vol. EDL-6, No. 4, Apr. 1985, pp. 178-180.
Dumke, W. P., Fang, F. F., & Fowler, A. B., "Heterostructure Long Lifetime Hot Electron Transistor", IBM Tech. Disc. Bull., vol. 24, No. 7A, Dec. 1981, pp. 3229-3231.
U. Mishra, E. Kohn and L. F. Eastman, "Submicron GaAs Vertical Electron Transistor", IEDM Technical Digest 82, pp. 594-597.
Z. Rav-Noy, L-T. Lu, E. Kapon, S. Mukai, S. Margalit, and A. Yariv, "Vertical Field-Effect Transistors in III-V Semiconductors", Applied Physics Letters, vol. 45, No. 3, Aug. 1984, pp. 258-260.

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