Static information storage and retrieval – Floating gate – Particular connection
Patent
1996-10-30
1998-10-27
Le, Vu A.
Static information storage and retrieval
Floating gate
Particular connection
36518528, 36518518, 36518909, G11C 1602
Patent
active
058286004
ABSTRACT:
Each memory cell of a non-volatile semiconductor memory essentially consisting of a one-transistor type memory cell comprising only of an MOSFET having a floating gate electrode. When an electric programming operation is carried out, a positive voltage is applied to an n type drain region, a negative voltage is applied to a control gate and a source region is grounded. When an erasing operation is carried out, the positive voltage is applied to the control gate while all the other electrodes and a semiconductor substrate are grounded. Low power consumption can be accomplished because both of the programming operation and erasing operations are carried out by utilizing a tunneling mechanism. Particularly because the negative voltage is used for the word line, a drain voltage at the time of programming of data can be lowered, so that degradation of a gate oxide film at a channel portion can be mitigated.
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Adachi Tetsuo
Kato Masataka
Kume Hitoshi
Sasaki Toshio
Tanaka Toshihiro
Hitachi , Ltd.
Le Vu A.
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