Method of manufacturing a semiconductor device utilizing etch an

Details Method of manufacturing a semiconductor device utilizing etch an Method of manufacturing a semiconductor device utilizing etch an

1980-08-21

1983-01-25

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29578, 29590, 29591, 148174, 148175, 148187, 156643, 156648, 156657, 156662, 357 50, 357 59, H01L 21283, H01L 2176

Patent

active

043695655

ABSTRACT:
A method of manufacturing a semiconductor device characterized in that after a fine groove has been formed in the surface of a semiconductor layer by dry etching, an insulating region is formed so as to fill up the fine groove.

REFERENCES:
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patent: 4048649 (1977-09-01), Bohn
patent: 4187516 (1980-02-01), Legat et al.
patent: 4225879 (1980-09-01), Vinson
patent: 4233091 (1980-11-01), Kawabe
patent: 4252579 (1981-02-01), Ho et al.
Sanders et al., "Improved Dielectric-Junction Combination Isolation . . .," IEEE I.E.D. MTG, Tech. Digest, (Dec. 1973), pp. 38-40.

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