Bipolar memory cell

Details Bipolar memory cell Bipolar memory cell

1982-05-20

1985-09-24

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 15, 357 59, 357 92, 357 67, 357 86, 365154, 365175, 365189, 365190, 307272R, 307291, 307317A, H01L 2970, H01L 2704, H01L 2352

Patent

active

045435952

ABSTRACT:
A bipolar memory cell is fabricated by forming diodes 60 and 65 on top of the transistors Q1 and Q2 formed in the underlying substrate 10. Metal silicide 30 overlies strips 34 and 35 of doped polycrystalline silicon 25, 28, 37, and 38 to cross-couple the bases and collectors of the two transistors Q1 and Q2 forming the memory cell. The metal silicide 30 shorts PN junctions 29 in polycrystalline 23. Two further strips 50 and 52, each comprising a sandwich of P type polycrystalline silicon 42, metal silicide 45, and N conductivity type polycrystalline silicon 47, are formed to couple the cross-coupled bases and collectors to respective diodes 60 and 65. The diodes 60 and 65 are formed by depositing metal 62 and 64 in electrical contact with the underlying N type polycrystalline silicon 47.

REFERENCES:
patent: 3573499 (1971-04-01), Lynes
patent: 3770606 (1973-11-01), Lepselter
patent: 3922565 (1975-11-01), Berger et al.
patent: 4104732 (1978-08-01), Hewlett, Jr.
patent: 4220961 (1980-09-01), Werner
patent: 4412239 (1983-10-01), Iwasaki et al.
patent: 4450470 (1984-05-01), Shiba

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