Process for making an inverted silicon-on-insulator semiconducto

Details Process for making an inverted silicon-on-insulator semiconducto Process for making an inverted silicon-on-insulator semiconducto

1987-07-31

1990-02-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG11, 148DIG26, 148DIG50, 148DIG53, 148DIG135, 156657, 156662, 357 231, 357 55, 437 33, 437 40, 437 90, 437 86, 437915, 437193, 437974, H01L 2176, H01L 2120

Patent

active

049026410

ABSTRACT:
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers, dielectric layers, an epitaxial region and a nitride layer, a second substrate is bonded to the nitride layer and the first substrate is removed. This allows for an epitaxial region which is isolated from the substrate.

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