Process for making a bipolar integrated circuit

Fishing – trapping – and vermin destroying

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437 81, 437152, 148DIG11, 148DIG37, 357 34, H01L 21265

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active

049026330

ABSTRACT:
A bipolar integrated circuit requiring less silicon area is provided by the use of a three layer epitaxy on top of a substrate. The first epitaxial layer is of the same conductivity type as the substrate and adds additional height to the substrate surrounding the buried layer. The buried layer serves as a collector and it is surrounded by an isolation area. The top two epitaxial layers are of a conductivity type opposite to that of the substrate with the upper most epitaxial layer having a higher dopant density than does the middle epitaxial layer. A master mask is used to provide self-alignment between the isolation area, a collector plug which makes contact to the buried layer, and a base region.

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